This paper reports results of the simulation of an optical phase modul
ator. The proposed modulator consists of an elongated p-i-n structure
fabricated in a silicon-on-insulator material such as SIMOX. It utiliz
es the free-carrier effect to produce the desired refractive index cha
nge in a single-mode optical rib waveguide. The MEDICI two-dimensional
semiconductor device simulation package has been employed to optimize
the overlap between the injected free carriers and the propagating op
tical guided mode. Although the device is designed to support a single
optical guided mode, it measures several micrometers in cross section
al dimensions, thereby simplifying fabrication and allowing efficient
coupling to/from other single-mode devices. Furthermore, the device ha
s an extremely high figure of merit, predicting over 200 degrees of in
duced phase shift per volt per millimeter, as well as a low drive curr
ent of less than 10 mA. This is approximately an order of magnitude lo
wer than most other reported devices in silicon.