COMPUTER-PROGRAMS FOR SURFACE-ANALYSIS BY SIMS AND SNMS

Programs which have been developed to enable the rapid identification and quantification of elemental and molecular ions in SIMS and SNMS (S puttered Neutral Mass Spectrometry) are described. The efficiency of t hese programs in identifying elemental species and quantifying concent ration has been tested with amorphous silicon nitride films. Silicon d oped with boron by ion implantation and a range of cobalt-silicon allo ys have been used to test quantification in SIMS by the 'relative sens itivity factor' (RSF) method and quantification in SNMS respectively. The concentration obtained for boron in silicon by the RSF method gave good agreement with the concentration obtained from the ion implantat ion flux. Accurate quantification results were also obtained from the SNMS data.