In many fields of advanced technology, thin film properties are fitted
to specific requirements by the codeposition of alloying additives. I
n particular the physical vapour deposition (PVD) techniques allow an
almost unlimited range of film composition. The sources can be single
or multiple targets. Due to the technical performances of the depositi
on process, an inhomogeneous in-depth distribution of the elemental co
ncentration may occur. In the present paper the concentration distribu
tion of multicomponent thin films is discussed using ternary nitride c
oatings as an example ((Ti,Cr)N, (Ti,Pd)N, (Cr,Pd)N)). Oscillating ele
mental distribution is observed due to the sample rotation during film
deposition. The laminate thickness depends on the flux density and ro
tation speed governing the local growth rate and can range down to few
nanometres. The ternary nitride films were deposited by the hollow ca
thode discharge electron beam evaporation and the magnetron sputter te
chnique, respectively, and were characterized by Auger electron spectr
oscopy (AES) and glow discharge optical spectroscopy (GDOS).