PULSED-LASER INDUCED ABLATION APPLIED TO EPITAXIAL-GROWTH OF SEMICONDUCTOR-MATERIALS - SELENIDES AND TELLURIDES PLUME ANALYSIS

Authors
TEGHIL R GUIDONI AG MELE A PICCIRILLO S CORENO M MAROTTA V DIPALMA TM
Citation
R. Teghil et al., PULSED-LASER INDUCED ABLATION APPLIED TO EPITAXIAL-GROWTH OF SEMICONDUCTOR-MATERIALS - SELENIDES AND TELLURIDES PLUME ANALYSIS, Surface and interface analysis, 22(1-12), 1994, pp. 181-185
Citations number
8
Categorie Soggetti
Chemistry Physical
Journal title
Surface and interface analysis → ACNP
ISSN journal
01422421
Volume
22
Issue
1-12
Year of publication
1994
Pages
181 - 185
Database
ISI
SICI code
0142-2421(1994)22:1-12<181:PIAATE>2.0.ZU;2-G
Abstract
In this study the analysis of ionic and neutral species produced by th e interaction between laser radiation and SnSe and SnTe targets is rep orted. Time of flight mass spectrometry and emission spectroscopy are used for the characterization of the ablated material. Relations betwe en target and plume composition are discussed in order to improve the understanding of the laser deposition process.