INVESTIGATION OF CDS PASSIVATION LAYERS ON HG1-XCDXTE

Authors
KACIULIS S MATTOGNO G VITICOLI S MARINI ME CESQUI F ALFUSO S MERCURI A
Citation
S. Kaciulis et al., INVESTIGATION OF CDS PASSIVATION LAYERS ON HG1-XCDXTE, Surface and interface analysis, 22(1-12), 1994, pp. 197-201
Citations number
22
Categorie Soggetti
Chemistry Physical
Journal title
Surface and interface analysis → ACNP
ISSN journal
01422421
Volume
22
Issue
1-12
Year of publication
1994
Pages
197 - 201
Database
ISI
SICI code
0142-2421(1994)22:1-12<197:IOCPLO>2.0.ZU;2-1
Abstract
CdS thin films were deposited on sapphire substrates and on the HgxCd1 -xTe epitaxial and single crystal samples by using chemical decomposit ion on thiourea and anodic non-aqueous sulphidation techniques, respec tively. The chemical composition and depth profiles of deposited films were investigated by selected area XPS combined with Ar+ ion sputteri ng. Lateral homogeneity of CdS films was studied by using scanning Aug er microscopy. Nearly stoichiometric CdS films were obtained on sapphi re and HgxCe1-xTe. The thickness, chemical composition and sputtering rate at 2 keV ion energy were determined from XPS data. In both cases (either deposited on sapphire or on HgxCd1-xTe) the CdS films were fou nd to be very non-homogeneous in thickness.