AN XPS STUDY OF DIAMOND FILMS GROWN ON DIFFERENTLY PRETREATED SILICONSUBSTRATES

X-ray photoelectron spectroscopy was used to investigate how different pretreatments modify the chemical composition and bonding on silicon substrate surface and, to detect the intermediate phases present at th e diamond film interface. The pretreatments were mechanical scratching with a diamond powder, ultrasonic abrasion with diamond suspension an d in situ negative dc biasing. The XPS results indicated the presence of hydrocarbons and the formation of new chemical species on the Si su bstrates such as oxides and carbides. The very important role played b y silicon carbide on diamond nucleation and growth was underlined by t he phases found at the diamond films interface.