F. Arezzo et al., AN XPS STUDY OF DIAMOND FILMS GROWN ON DIFFERENTLY PRETREATED SILICONSUBSTRATES, Surface and interface analysis, 22(1-12), 1994, pp. 218-223
X-ray photoelectron spectroscopy was used to investigate how different
pretreatments modify the chemical composition and bonding on silicon
substrate surface and, to detect the intermediate phases present at th
e diamond film interface. The pretreatments were mechanical scratching
with a diamond powder, ultrasonic abrasion with diamond suspension an
d in situ negative dc biasing. The XPS results indicated the presence
of hydrocarbons and the formation of new chemical species on the Si su
bstrates such as oxides and carbides. The very important role played b
y silicon carbide on diamond nucleation and growth was underlined by t
he phases found at the diamond films interface.