ELLIPSOMETRIC INVESTIGATION OF SINGLE-CRYSTALLINE CZ-SI SUBJECTED TO HYDROSTATIC-PRESSURE

Authors
KAMINSKA AM MISIUK A WOLF J
Citation
Am. Kaminska et al., ELLIPSOMETRIC INVESTIGATION OF SINGLE-CRYSTALLINE CZ-SI SUBJECTED TO HYDROSTATIC-PRESSURE, Surface and interface analysis, 22(1-12), 1994, pp. 346-349
Citations number
8
Categorie Soggetti
Chemistry Physical
Journal title
Surface and interface analysis → ACNP
ISSN journal
01422421
Volume
22
Issue
1-12
Year of publication
1994
Pages
346 - 349
Database
ISI
SICI code
0142-2421(1994)22:1-12<346:EIOSCS>2.0.ZU;2-D
Abstract
The application of ellipsometry to study the SiO(x)/Si system subjecte d to hydrostatic pressures up to 1.8 GPa at temperatures up to 1280-de grees-C is described. The theoretical model of defects as the spherica l disturbances of material has been assumed. The ellipsometric paramet ers have been analysed as a function of defects size and density and c ompared with data obtained by etching and x-ray methods. The applicabi lity of ellipsometry for near-surface defect structure analysis has be en discussed.