XPS INVESTIGATIONS OF ELECTROCHEMICALLY MODIFIED POROUS SILICON LAYERS

Authors
JESKE M JUNG KG SCHULTZE JW THONISSEN M MUNDER H
Citation
M. Jeske et al., XPS INVESTIGATIONS OF ELECTROCHEMICALLY MODIFIED POROUS SILICON LAYERS, Surface and interface analysis, 22(1-12), 1994, pp. 363-366
Citations number
13
Categorie Soggetti
Chemistry Physical
Journal title
Surface and interface analysis → ACNP
ISSN journal
01422421
Volume
22
Issue
1-12
Year of publication
1994
Pages
363 - 366
Database
ISI
SICI code
0142-2421(1994)22:1-12<363:XIOEMP>2.0.ZU;2-W
Abstract
The effect of electrochemical modifications like anodic oxidation, pol ymer deposition and electrodeposition of Cu and Ni on porous silicon a re investigated with XPS and sputter depth profiling. It is shown that after the anodic oxidation small amounts of Si0 remain in the porous layer. The deposition of polymers as well as of metals takes place not only at the surface, but also in the porous layer.