SCANNING TUNNELING INDUCED LUMINESCENCE IN SEMICONDUCTORS AND METAL-FILMS

Authors
BISCHOFF M KREBS B PAGNIA H STEHLE M
Citation
M. Bischoff et al., SCANNING TUNNELING INDUCED LUMINESCENCE IN SEMICONDUCTORS AND METAL-FILMS, International journal of electronics, 77(2), 1994, pp. 205-212
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
International journal of electronics → ACNP
ISSN journal
00207217
Volume
77
Issue
2
Year of publication
1994
Pages
205 - 212
Database
ISI
SICI code
0020-7217(1994)77:2<205:STILIS>2.0.ZU;2-G
Abstract
The scanning tunnelling microscope can be used to study several phenom ena in addition to producing highly resolved topographic information f rom surfaces. One of these phenomena is the luminescence which has bee n observed from the surfaces of semiconductors or thin metallic films because the recombination process of minority carriers injected into a semiconductor is partly radiative. Electrons tunnelling to a metallic surface are able to induce surface plasmons which partly decay by emi tting photons.