ANALYSIS OF SUBSURFACE DAMAGE IN SILICON BY PHOTOLUMINESCENCE AND PHOTOTHERMAL HETERODYNE METHODS

Authors
GEILER HD KARGE H WAGNER M EHLERT A KERSTAN M HELMREICH D
Citation
Hd. Geiler et al., ANALYSIS OF SUBSURFACE DAMAGE IN SILICON BY PHOTOLUMINESCENCE AND PHOTOTHERMAL HETERODYNE METHODS, Progress in Natural Science, 6, 1996, pp. 498-502
Citations number
6
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Progress in Natural Science → ACNP
ISSN journal
10020071
Volume
6
Year of publication
1996
Supplement
S
Pages
498 - 502
Database
ISI
SICI code
1002-0071(1996)6:<498:AOSDIS>2.0.ZU;2-4
Abstract
A new technique using the detection of the real part of the excess cha rge carrier wave by photoluminescence over the frequency range from 5k Hz up to 12MHz is introduced for semiconductor defect analysis. Proces s induced defects of silicon wafers are investigated and the results a re correlated with those gained from photothermal measurements.