PHOTOTHERMAL INVESTIGATION OF IMPLANTED SI WAFERS - INFLUENCE OF THERMAL-DIFFUSIVITY

Authors
BARBEREAU I FORGET BC FOURNIER D
Citation
I. Barbereau et al., PHOTOTHERMAL INVESTIGATION OF IMPLANTED SI WAFERS - INFLUENCE OF THERMAL-DIFFUSIVITY, Progress in Natural Science, 6, 1996, pp. 503-506
Citations number
7
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Progress in Natural Science → ACNP
ISSN journal
10020071
Volume
6
Year of publication
1996
Supplement
S
Pages
503 - 506
Database
ISI
SICI code
1002-0071(1996)6:<503:PIOISW>2.0.ZU;2-5
Abstract
Implanted Si wafers are studied by two photothermal techniques in very different experimental conditions. Photothermal microscopy is known t o be very sensitive to implantation but modelization can be cumbersome . Mirage detetection at low frequency is shown to be very effecient in characterizing implanted samples even though the thermal wave length is much greater than the damage depth. It is precisely this fact that permits a simpler modelization.