PHOTOTHERMAL CHARACTERIZATION OF ION-IMPLANTED SIC

Authors
WALTHER HG KARGE H MURATIKOV K
Citation
Hg. Walther et al., PHOTOTHERMAL CHARACTERIZATION OF ION-IMPLANTED SIC, Progress in Natural Science, 6, 1996, pp. 511-514
Citations number
2
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Progress in Natural Science → ACNP
ISSN journal
10020071
Volume
6
Year of publication
1996
Supplement
S
Pages
511 - 514
Database
ISI
SICI code
1002-0071(1996)6:<511:PCOIS>2.0.ZU;2-D
Abstract
Photothermal measurements from He+ doped 6H-SiC wafers are reported. B y careful and simultaneous interpretation of the measured optical refl ectance and thermoreflectance signals, the estimation of the implantat ion depth becomes possible, provided the known dose dependence of the refractive index. The procedure is demonstrated experimentally.