MODELING THE IV CHARACTERISTICS OF FULLY DEPLETED SUBMICROMETER SOI MOSFETS

In this paper, an analytic current-voltage model for submicrometer ful ly-depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. Thi s model takes into account the source/drain series resistances which c an be especially high in thin film SOI devices. The effect of drain in duced conductivity enhancement is also included, which is important fo r submicrometer channels. The model is verified by comparison to measu red SOI I-V characteristics. Good agreement is obtained for SOI film t hicknesses ranging from 40 to 220 nm and effective channel lengths dow n to 0.25 mum.