OPTOELECTRONIC INTEGRATION OF A GAAS ALGAAS BISTABLE FIELD-EFFECT TRANSISTOR (BISFET) AND LED/

The bistable field effect transistor (BISFET) is a novel inversion-cha nnel switching device exhibiting abrupt current transitions and hyster esis in its output characteristics. The semiconductor structure of the BISFET is compatible with a range of electronic and optoelectronic de vices. In this work, integration of a BISFET with an LED is reported. Both devices have been implemented on a single semiconductor substrate using a single fabrication sequence. The BISFET is used to current-dr ive the LED. Abrupt transitions and hysteresis are seen in the optical output from the circuit in the range of gate voltage from 1.75 V to 1 .9 V.