DC MODELING OF MODIFIED FIELD-EFFECT TRANSISTOR

Authors
ALAKHRAS MA KHAN AA ALAMOUD AM
Citation
Ma. Alakhras et al., DC MODELING OF MODIFIED FIELD-EFFECT TRANSISTOR, International journal of electronics, 76(3), 1994, pp. 417-424
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
International journal of electronics → ACNP
ISSN journal
00207217
Volume
76
Issue
3
Year of publication
1994
Pages
417 - 424
Database
ISI
SICI code
0020-7217(1994)76:3<417:DMOMFT>2.0.ZU;2-#
Abstract
An analytical as well as experimental study of JFET-BJT composite unit , referred to as a modified field effect transistor (MFET), is describ ed. Complete analysis of the circuit is presented, and on the basis of this analysis a DC model is proposed. The proposed model showed a ver y good approximation of the MFET circuit compared to the experimental results.