MEASUREMENT OF MOS CURRENT MISMATCH IN THE WEAK INVERSION REGION

Authors
FORTI F WRIGHT ME
Citation
F. Forti et Me. Wright, MEASUREMENT OF MOS CURRENT MISMATCH IN THE WEAK INVERSION REGION, IEEE journal of solid-state circuits, 29(2), 1994, pp. 138-142
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE journal of solid-state circuits → ACNP
ISSN journal
00189200
Volume
29
Issue
2
Year of publication
1994
Pages
138 - 142
Database
ISI
SICI code
0018-9200(1994)29:2<138:MOMCMI>2.0.ZU;2-W
Abstract
We have measured the current matching properties of MOS transistors op erated in the weak inversion region. We measured a total of about 1400 PMOS and NMOS transistors produced in four different processes and re port here the results in terms of mismatch dependence on current densi ty, device dimensions, and substrate voltage, without using any specif ic model for the transistor.