Data are presented characterizing the transverse mode behavior of AlAs
/GaAs/InGaAs vertical-cavity surface-emitting lasers fabricated using
a native-oxide process. The native-oxide process results in laser diod
es with active regions defined to be 10, 8, and 4 mu m squares. We sho
w that the transverse lasing mode is influenced by mirror reflectivity
, with significant mode changes occurring with drive current for 8-10
mu m devices in the ranges of one to four times threshold. In smaller
devices of 4 mu m square dimension, the transverse mode at threshold a
ppears as a lowest order mode.