We demonstrate a new method whereby near-field optical microscope reso
lution can be extended to the nanometer regime. The technique is based
on measuring the modulation of the scattered electric field from the
end of a sharp silicon tip as it is stabilized and scanned in close pr
oximity to a sample surface. Our initial results demonstrate resolutio
n in the 3 nm range-comparable to what can be achieved with typical at
tractive mode atomic force microscopes. Theoretical considerations pre
dict that the ultimate resolution achievable with this approach could
be close to the atomic level.