THERMAL CONDUCTION IN METALLIZED SILICON-DIOXIDE LAYERS ON SILICON

The vertical thermal conductivities of thermally grown (TG) and chemic al vapor deposited (CVD) silicon-dioxide layers 20 to 200 nm thick are measured using a simple, noncontact photothermal technique. The condu ctivities of TF and CVD layers are less by as much as 18% and 30%, res pectively, than the conductivity of bulk fused silicon dioxide. No sig nificant thickness dependence is observed. The thermal boundary resist ance between the oxide layers and silicon is shown to be negligibly sm all. The boundary resistance of gold layers sputtered directly onto TG oxide is considerably larger than that of gold layers evaporated on T G oxide with a 20-nm chromium adhesion layer, and is comparable to int ernal resistances of the oxide layers.