SITE-COMPETITION EPITAXY FOR SUPERIOR SILICON-CARBIDE ELECTRONICS

We present and discuss a novel dopant control technique for compound s emiconductors, called site-competition epitaxy, which enables a much w ider range of reproducible doping control and affords much higher and lower epilayer doping concentrations than was previously possible. Sit e-competition epitaxy is presented for the chemical vapor deposition o f 6H-SiC epilayers on commercially available (0001)SiC silicon-face su bstrates. Results from utilizing site-competition epitaxy include the production of degenerately doped SiC epilayers for ohmic-as-deposited (i.e., unannealed) metal contacts as well as very low doped epilayers for electronic devices exhibiting SiC record-breaking reverse voltages of 300 and 2000 V for 3C- and 6H-SiC p-n junction diodes, respectivel y.