OPTICAL-TRANSITIONS IN STRAINED IN1-XGAXASYP1-Y QUANTUM-WELLS CLAD BYLATTICE-MATCHED BARRIERS OF INGAASP

We extend the deformation potential model developed previously for InG aAs/InP quantum wells to include strained quaternary wells, under comp ressive or tensile strain, and lattice-matched (or also strained) quat ernary barriers. This requires interpolation of the needed quaternary materials parameters in a plane bound by the four binary parent compou nds. The calculated energies of heavy and light hole transitions are c ompared to measured values obtained on a set of compressively strained multi-quantum-well quaternary structures grown on (100) InP with the lattice mismatch strain Delta a/a as large as 0.75%. Our experimental results are in good agreement with the extended model.