CHARACTERIZATION OF INTERFACE TOPOGRAPHY OF THE BURIED SI-SIO2 INTERFACE IN SILICON-ON-INSULATOR MATERIAL BY ATOMIC-FORCE MICROSCOPY

Authors
CROWDER SW GRIFFIN PB PLUMMER JD
Citation
Sw. Crowder et al., CHARACTERIZATION OF INTERFACE TOPOGRAPHY OF THE BURIED SI-SIO2 INTERFACE IN SILICON-ON-INSULATOR MATERIAL BY ATOMIC-FORCE MICROSCOPY, Applied physics letters, 65(13), 1994, pp. 1698-1699
Citations number
2
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
13
Year of publication
1994
Pages
1698 - 1699
Database
ISI
SICI code
0003-6951(1994)65:13<1698:COITOT>2.0.ZU;2-T
Abstract
Atomic force microscopy (AFM) has been used to characterize the topogr aphy of the buried Si-SiO2 interface in Bonded, single-implant Separat ion by IMplantation of OXygen (SIMOX), and multiple-implant SIMOX sili con-on-insulator material. The properties of this interface have impor tant implications for processing and for device performance. The root- mean-square surface roughness was found to be 11.4 nm for single-impla nt material, 2.9 nm for multiple-implant material, and less than 1.5 n m for bonded material.