STRAIN EFFECTS ON THE INTERVALENCE-SUBBAND NORMAL-INCIDENCE ABSORPTION IN A P-TYPE INGAAS INP QUANTUM-WELL/

The lattice mismatch (strain) effects on the normal-incidence infrared absorption in In 1-xGaxAs/InP quantum wells is investigated systemati cally, bath tensile (x>0.47) and compressive (x<0.47) cases being cons idered. The difference of the valence-band parameters in the well and barrier materials is taken into account in the dipole matrix element c alculations. For a constant hole sheet density, the compressive stress is found to enhance the infrared absorption substantially in the freq uency range around 100 meV, corresponding to the H1-H3 type transition s, and the tensile stress is shown to decrease the normal-incidence in tervalence-subband absorption.