HETEROEPITAXIAL SI SI1-XGEX SI STRUCTURES PRODUCED USING PULSED UV-LASER PROCESSING

High quality heteroepitaxial regrowth of arsenic-implanted a-Si on Si1 -xGex layers with Ge fractions between 0 and 0.2 is accomplished using pulsed laser induced epitaxy (PLIE). The structures of boron-doped Si 1-xGex on Si(100) are created beforehand using a combination of (PLIE) and gas immersion laser doping. A small amount of Ge and B backdiffus ion from the Si1-xGex film into the top Si layer is observed. During t he laser pulse, the implanted arsenic diffuses up to the maximum melt depth so that melt depth and junction depth coincide. The a-Si is sput ter deposited to a thickness of 900 Angstrom, and the As is implanted to a dose of 5x10(14) cm(-2) at 40 keV. A single XeCl excimer laser pu lse with an energy fluence to be selected between 0.6 and 0.8 J/cm(2) is sufficient to heteroepitaxially regrow the a-Si and activate the im planted arsenic.