SUBPICOSECOND CARRIER LIFETIME IN INP

Authors
CHEN WX JIAO PF WANG SM ZOU YH XIA ZJ YUAN P
Citation
Wx. Chen et al., SUBPICOSECOND CARRIER LIFETIME IN INP, Solid state communications, 91(12), 1994, pp. 945-947
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
91
Issue
12
Year of publication
1994
Pages
945 - 947
Database
ISI
SICI code
0038-1098(1994)91:12<945:SCLII>2.0.ZU;2-5
Abstract
Femtosecond time-resolved reflectivity investigations reveal a signifi cant reduction in carrier lifetime from 100ps in nonintentionally dope d InP to less than 1ps in S, Fe, and Zn doped InP. This reduction is b ecause S, Fe, and Zn in InP serve as recombination and trapping center s. Photoluminescence and Raman measurements were used to confirm these results.