APPLICATION OF FERROELECTRIC THIN-FILMS TO SI DEVICES

Authors
ARITA K FUJII E SHIMADA Y UEMOTO Y AZUMA M HAYASHI S NASU T INOUE A MATSUDA A NAGANO Y KATSU S OTSUKI T KANO G MCMILLAN LD DEARAUJO CAP
Citation
K. Arita et al., APPLICATION OF FERROELECTRIC THIN-FILMS TO SI DEVICES, IEICE transactions on electronics, E77C(3), 1994, pp. 392-398
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEICE transactions on electronics → ACNP
ISSN journal
09168524
Volume
E77C
Issue
3
Year of publication
1994
Pages
392 - 398
Database
ISI
SICI code
0916-8524(1994)E77C:3<392:AOFTTS>2.0.ZU;2-Z
Abstract
Characterization of silicon devices incorporating the capacitor which uses ferroelectric thin films as capacitor dielectrics is presented. A s cases in point, a DRAM cell capacitor and an analog/digital silicon IC using the thin film of barium strontium titanate (Ba1-xSr(x)TiO3) a re examined. Production and characterization of the ferroelectric thin films are also described, focusing on a Metal Organic Deposition tech nique and liquid source CVD.