THE PHOTOYIELD OF CSI, AMORPHOUS-SILICON AND ORGANOMETALLIC REFLECTIVE PHOTOCATHODE MATERIALS

Authors
MALAMUD G MINE P VARTSKY D EQUER B BRESKIN A CHECHIK R
Citation
G. Malamud et al., THE PHOTOYIELD OF CSI, AMORPHOUS-SILICON AND ORGANOMETALLIC REFLECTIVE PHOTOCATHODE MATERIALS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 343(1), 1994, pp. 121-128
Citations number
22
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
343
Issue
1
Year of publication
1994
Pages
121 - 128
Database
ISI
SICI code
0168-9002(1994)343:1<121:TPOCAA>2.0.ZU;2-A
Abstract
We investigated the photoyield from CsI, p and n doped and undoped amo rphous silicon and some organometallic (decamethyl-ferrocene,1,1',dime thylferrocene and ruthenocene) reflective photocathodes, in the spectr al range 140-220 nm. The measurements were made in a current collectio n mode, in vacuum and in methane. Powder and crystal forms of CsI were used for evaporation of bulk and porous photocathodes. The radiation resistance of CsI was measured at doses reaching 4500 Gy. The effect o n the quantum efficiency of various n and p doping levels of amorphous silicon was measured.