TRAP GENERATION IN BURIED OXIDES OF SILICON-ON-INSULATOR STRUCTURES BY VACUUM-ULTRAVIOLET RADIATION

The generation of defects in buried oxide layers in silicon-on-insulat or structures by vacuum ultraviolet radiation is studied using electro n/hole trapping measurements and electron spin resonance. The oxide la yers produced by oxygen implantation show trap generation near the irr adiated oxide surface, in contrast to thermally grown and bonded oxide s, in which the defects are produced over the entire oxide volume. Spa tially confined trap production is associated with the limited length of radiolytic hydrogen diffusion in the oxide during irradiation due t o the enhanced interaction of hydrogen with the oxide network.