PHYSICAL-PROPERTIES OF A-SIO(X) - H-ALLOYS PREPARED BY DC MAGNETRON SPUTTERING WITH WATER-VAPOR AS OXYGEN SOURCE

Amorphous SiO(x):H films were prepared by dc magnetron sputtering from a crystalline Si-target and using water vapour as an oxygen source. T he films containing various amounts of oxygen (x = 0.1...1.9) and a to tal hydrogen content up to 20 at.%, respectively, were examined by opt ical and infrared spectroscopy and dc conductivity measurements. The i nfluence of the film composition on the optical and electrical propert ies was investigated. The static refractive index varied from 2.8 to 1 .6, the Tauc gap from 1.6 to 2.4 eV and the dc conductivity from 10(-5 ) to 10(-10) OMEGA-1 cm-1 with increase of the oxygen content.