610-NM BAND ALCAINP SINGLE-QUANTUM-WELL LASER-DIODE

The short-wavelength limits of AlGaInP visible laser diodes with Al0.5 In0.5P cladding layers, and GaxIn1-xP single quantum well (QW) active regions are investigated. Good performance is maintained throughout th e 620 nm band, but the characteristics rapidly degrade in the 610 nm b and. Biaxial-compression and -tension were compared, with the case of tension yielding slightly better performance. Using a 25angstrom Ga0.4 5In0.55P QW, a wavelength of 614 mm was obtained, while a 50angstrom G a0.6In0.4P QW emitted at 620 nm with a threshold current density of 0. 8 kA/cm2. These results with thin single QWs indicate the effectivenes s of using an Al0.5In0.5P cladding layer to reduce electron leakage.