OXIDATION OF SILICON-NITRIDE UNDER STANDARD AIR OR MICROWAVE-EXCITED AIR AT HIGH-TEMPERATURE AND LOW-PRESSURE

Citation
M. Balat et al., OXIDATION OF SILICON-NITRIDE UNDER STANDARD AIR OR MICROWAVE-EXCITED AIR AT HIGH-TEMPERATURE AND LOW-PRESSURE, Journal of Materials Science, 32(5), 1997, pp. 1187-1193
Citations number
37
Categorie Soggetti
Material Science
ISSN journal
00222461
Volume
32
Issue
5
Year of publication
1997
Pages
1187 - 1193
Database
ISI
SICI code
0022-2461(1997)32:5<1187:OOSUSA>2.0.ZU;2-P
Abstract
During the atmospheric re-entry of space shuttles, the thermal constra ints due to the hypersonic velocity can lead to very extensive damage on materials of the protective heat shield (oxidation; thermal shock, etc.). In order to test the oxidation resistance of such materials, we have realized an experimental set-up called MESOX which associates a concentrated radiation solar furnace and a microwave generator. The ma ximal heat flux is 4.5 MW m(-2), and the temperature ranges up to 2500 K. The total pressure is in the range 10(2)-10(4) Pa. For silicon-bas ed ceramics, it is necessary to have a good knowledge of the condition s for the existence of a protective silica layer. The determination of the transition between passive and active oxidation is done, in the c ase of sintered silicon nitride, under standard and microwave-excited air.