Ph. Cutler et al., A NEW MODEL FOR THE REPLACEMENT PROCESS IN ELECTRON-EMISSION AT HIGH FIELDS AND TEMPERATURES, Applied surface science, 76(1-4), 1994, pp. 1-6
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
A new model is presented to resolve the Nottingham-Fleming and Henders
on controversy concerning the average energy of the replacement electr
ons in field emission. In addition to thermal excitation, we introduce
the tunnelling-state contribution as a mechanism to vacate levels ava
ilable for replacement electrons. It is found that the condition for a
steady-state current is not satisfied without the tunnelling-state co
ntribution. The present result of the net energy exchange DELTAepsilon
per electron obtained as a function of both temperature and field sho
ws much improved agreement with experimental data. The inversion tempe
rature T(i) as a function of field is now in good quantitative agreeme
nt with existing experimental data. Contrary to the assertion of Notti
ngham [Phys. Rev. 59 (1941) 907] that the replacement energy is equal
to the chemical potential of the emitter, our results favor the argume
nt of Fleming and Henderson [Phys. Rev. 58 (1940) 8871 that the replac
ement process takes place in the available energy states below the Fer
mi energy in the emitter. Non-equilibrium effects in the emitter due t
o fields and temperature gradients evaluated within the relaxation tim
e approximation are noticeable only for large fields.