THE SURFACE OF MACHINED SILICON-WAFERS - A RAMAN-SPECTROSCOPIC STUDY

Authors
VERHEY J BISMAYER U GUTTLER B LUNDT H
Citation
J. Verhey et al., THE SURFACE OF MACHINED SILICON-WAFERS - A RAMAN-SPECTROSCOPIC STUDY, Semiconductor science and technology, 9(4), 1994, pp. 404-408
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
4
Year of publication
1994
Pages
404 - 408
Database
ISI
SICI code
0268-1242(1994)9:4<404:TSOMS->2.0.ZU;2-Q
Abstract
The machining processes applied during the manufacture of Si wafers ma y cause various types of surface damage which can be specified and qua ntified by Raman spectrometry. A quantitative evaluation of the line p rofile and position of the Raman active T2g vibration near 520 cm-1 in ID-sliced and differently lapped wafers reveals the existence of micr ocrystallites with grain sizes down to 3 nm in the vicinity of the waf er surface. The damage was found to vary with the lapping material use d.