POTENTIOMETRIC SENSOR USING STABILIZED ZIRCONIA AND TUNGSTEN-OXIDE FOR HYDROGEN-SULFIDE

Authors
YAN YT MIURA N YAMAZOE N
Citation
Yt. Yan et al., POTENTIOMETRIC SENSOR USING STABILIZED ZIRCONIA AND TUNGSTEN-OXIDE FOR HYDROGEN-SULFIDE, Chemistry Letters, (9), 1994, pp. 1753-1756
Citations number
12
Categorie Soggetti
Chemistry
Journal title
Chemistry Letters → ACNP
ISSN journal
03667022
Issue
9
Year of publication
1994
Pages
1753 - 1756
Database
ISI
SICI code
0366-7022(1994):9<1753:PSUSZA>2.0.ZU;2-5
Abstract
A solid-state electrochemical device based on Y2O3-stabilized zirconia was found to respond well to 0.6-12 ppm H2S in air at 400 degrees C, when its surface exposed to H2S was coated with a layer of WO3. EMF de creased with an increase in H2S concentration at a rate of -40 mV/deca de. It is proposed that in this device WO3 acts as a semiconductor ele ctrode, its mixed potential being determined by the electrode reaction s taking place at the zirconia/WO3 interface.