SOLUTION GROWTH OF SILICON ON AL-SI COATED QUARTZ GLASS SUBSTRATES

Authors
LEE SH BERGMANN R BAUSER E QUEISSER HJ
Citation
Sh. Lee et al., SOLUTION GROWTH OF SILICON ON AL-SI COATED QUARTZ GLASS SUBSTRATES, Materials letters, 19(1-2), 1994, pp. 1-6
Citations number
28
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
19
Issue
1-2
Year of publication
1994
Pages
1 - 6
Database
ISI
SICI code
0167-577X(1994)19:1-2<1:SGOSOA>2.0.ZU;2-T
Abstract
We investigated the solution growth of silicon on quartz glass in the temperature range 800-580-degrees-C. A thin Al-Si layer, evaporated on the quartz glass, served to improve the wetting between the substrate and the Al/Ga solvent. We obtained silicon deposits with a grain size up to a few 100 mum.