THE EFFECT OF GROWTH DEFECTS ON THE X-RAY REFLECTIVITY OF MULTILAYER SYSTEMS

Using the X-ray reflectivity technique to determine the electron densi ty profiles of multilayer thin films is becoming increasingly popular. We present here a computer simulation study of the effect of various growth defects of these multilayer films on their reflectivity profile s. The results are illustrated with the help of an MBE-grown GaAs-AlAs multilayer sample. These results will be useful to identify distinct signatures of various growth defects in the experimentally observed re flectivity curves and in tum would be helpful in constructing a physic ally meaningful model for electron density profiles of multilayer syst ems.