INFLUENCE OF THE OXYGEN PARTIAL-PRESSURE IN THE REDUCING GAS ON SRTIO3 SEMICONDUCTOR CERAMICS

Citation
S. Shibagaki et al., INFLUENCE OF THE OXYGEN PARTIAL-PRESSURE IN THE REDUCING GAS ON SRTIO3 SEMICONDUCTOR CERAMICS, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 102(9), 1994, pp. 858-862
Citations number
12
Categorie Soggetti
Material Science, Ceramics
ISSN journal
09145400
Volume
102
Issue
9
Year of publication
1994
Pages
858 - 862
Database
ISI
SICI code
0914-5400(1994)102:9<858:IOTOPI>2.0.ZU;2-B
Abstract
SrTiO3 ceramics were sintered under various oxygen partial pressures. The relationship between the oxygen partial pressure and properties of sintered samples was investigated by TEM, EDX and XRD measurements. A t lower oxygen partial pressure, the Ti8O15 phase about 5 mum in diame ter existed at triple points. On the contrary, at higher oxygen partia l pressure the Ti3O5 phase about 0.5 mum in diameter existed at triple points. The stability of Magneli phases was discussed on the basis of thermodynamic data. Lowering of oxygen partial pressure resulted in a n increase in oxygen vacancies and lattice parameters and further in a decrease in electric resistivity.