THE REGULARITIES OF FORMATION AND PROPERTIES OF GERMANIUM FILMS OBTAINED AT THERMAL-DECOMPOSITION OF GERMANE

Two different kinetic regimes of GeH4 thermal decomposition are reveal ed at temperatures between 423 and 693 K and pressures lower than 100 torr. In the first regime, at temperatures and pressures higher than t he critical values, the solid phase appears in the form of an aerosol; in the second regime, it manifests itself in the form of a film. Pyro lysis reaction proceeds via a nonbranched-chain mechanism; on this bas is the films are produced at temperatures 150 - 160 K lower than those previously used. A decrease in the synthesis temperature improves the semiconductive parameters of the film.