X-RAY CHARACTERIZATION OF SEMICONDUCTOR SURFACES AND INTERFACES

Authors
PLOTZ W HOLY V HOOGENHOF WVD LISCHKA K
Citation
W. Plotz et al., X-RAY CHARACTERIZATION OF SEMICONDUCTOR SURFACES AND INTERFACES, Journal de physique. III, 4(9), 1994, pp. 1565-1571
Citations number
10
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
4
Issue
9
Year of publication
1994
Pages
1565 - 1571
Database
ISI
SICI code
1155-4320(1994)4:9<1565:XCOSSA>2.0.ZU;2-W
Abstract
A method for the characterization of surfaces and interfaces on a nano meter scale by combining specular and nonspecular glancing incidence X -ray scattering is presented. The application of the method to crystal line silicon, polycrystalline silicon, and a thin gold layer on a sili con substrate is reported.