COMPETITION BETWEEN DAMAGE AND DOPING DUR ING ION-IMPLANTATION OF ELECTROACTIVE POLYMERS

From a general band scheme appropriate for electroactive polymers, we explain how each of the two main processes (damage or doping) induced by ion implantation can play a major role. DC conductivity, thermopowe r and AC conductivity studied versus temperature for varying implantat ion parameters allow us to confirm our interpretations: damage is prod uced by high implantation parameters in which case transport phenomena of p type occur mainly in degenerate states near the Fermi level, whe reas low implantation parameters induce doping in polaronic bands char acterized by thermally activated processes, although effects due to th e existence of defects can appear, especially at low temperature. Comp ensation effects, described by a Kubo-Greenwood formula applied to the thermoelectric power, give a consistent explanation of the successive behaviours. Moreover, we present a general interpretation of the p ty pe conductivity behaviour observed in intrinsic polymers.