GAS-DISTRIBUTION EFFECTS ON ELECTRON-CYCLOTRON-RESONANCE DEPOSITION REACTIONS

The ability to produce high quality films in an electron cyclotron res onance reactor is dependent on the gas distribution system. In an effo rt to understand gas distribution effects, a variety of gas ring injec tion systems were implemented during silicon nitride growth. Film refr active index, uniformity, and stress were used to gauge each gas distr ibution system. As a result, we have demonstrated that evenly distribu ted gas injection systems are the most desirable producing uniform fil ms. Film thickness uniformity was significantly influenced by the desi gn of the gas ring as well as the gas flow. Theoretical models support ed the observed results and identified desirable properties for gas ri ng distribution systems.