DOUBLE SCREENING PROBLEM IN DECHANNELING BY POINT-DEFECTS

Citation
Am. Siddiqui et al., DOUBLE SCREENING PROBLEM IN DECHANNELING BY POINT-DEFECTS, Physica status solidi. b, Basic research, 185(1), 1994, pp. 77-85
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
185
Issue
1
Year of publication
1994
Pages
77 - 85
Database
ISI
SICI code
0370-1972(1994)185:1<77:DSPIDB>2.0.ZU;2-F
Abstract
A simple double screening model is used to calculate the interaction p otential between an energetic channeled mu(+) and an impurity (O) in a n otherwise perfect single crystal (Ta). The twofold screening of the nuclear charge of the impurity is first due to the atomic electrons an d second due to conduction electrons of the host crystal (Ta). Using t his potential the dechanneling cross-section of muons due to the oxyge n impurity in the lattice of Ta along various planes is evaluated. Thr ee charge states of the oxygen impurity are considered and the corresp onding dechanneling cross-sections are predicted.