T. Suemasu et al., DIFFERENT CHARACTERISTICS OF METAL (COSI2) INSULATOR (CAF2) RESONANT-TUNNELING TRANSISTORS DEPENDING ON BASE QUANTUM-WELL LAYER, IEICE transactions on electronics, E77C(9), 1994, pp. 1450-1454
The transistor action with negative differential resistance (NDR) of a
nanometer-thick metal (CoSi2)/insulator (CaF2) resonant tunneling tra
nsistor is discussed for two transistor structures. These transistors
are composed of metal-insulator (M-I) heterostructures with two metall
ic (CoSi2) quantum wells and three insulator (CaF2) barriers grown on
an n-Si (111) substrate. One of the two structures has the base termin
al connected to one of the quantum wells next to the collector, and th
e other, to one next to the emitter. Although base resistance is high
maybe due to the damage caused during the fabrication process, the two
transistors show different characteristics, as expected theoretically
. Transfer efficiency alpha (= I(C)/I(E)) close to unity was obtained
at 77 K for electrons through the resonant levels in M-I heterostructu
res.