THE SUBSTRATE BIAS EFFECT ON THE STATIC AND DYNAMIC CHARACTERISTICS OF THE LATERAL IGBT ON THE THIN SOI FILM

The static and dynamic characteristics of the lateral IGBT on the SOI film when the collector voltage of the IGBT is applied to the substrat e are investigated for its application to the high side switch. The me asurements on the blocking capability and the switching characteristic s under an inductive load are carried out with varying the thickness o f the SOI film. The 260 V IGBT can be fabricated on the 5 mum thick SO I film without the special device structure. It is confirmed that the switching speed depends strongly on the SOI film thickness, not on the substrate bias. The dynamic latch-up current during the turn-off tran sient increases with the decrease in the SOI film thickness. This is c aused by the large transient substrate current. This paper exhibits th at applying the collector voltage of the IGBT to the substrate makes i t possible to improve the characteristics of the IGBT on the thin SOI film.