TEMPERATURE-DEPENDENT DOSE-RATE EFFECTS IN CMOS SOS DEVICES

The measured photocurrent output by the 3392-mum p-channel and 1992-mu m n-channel transistors in the output buffer of the Harris 05131A Octa l Latch manufactured in the TSOS4 1.25-mum CMOS/SOS process are used t o extract the field and temperature-dependent conductivity of the sapp hire substrate. The bulk conductivity was found to vary from 2.15 x 10 (-15) OMEGA-1/cm/rad(Si)/s at -55-degrees-C to 4.16 x 10(-15) OMEGA-1/ cm/rad(Si)/s at + 125-degrees-C. Parasitic transitor action contribute d significant photocurrents with the gain of the n-channel increasing from 1.3 +/- 0.3 at -55-degrees-C to 5.7 +/- 3.3 at + 125-degrees-C. T he gain of the p-channel followed the same temperature variation, with 1.6 +/- 0.5 at -55-degrees-C to 7.0 +/- 2.0 at + 125-degrees-C. The t emperature-dependence of both the substrate and parasitic treansistor action appeared due to an Arrenhius variation of the carrier lifetime or mobility controlled by a trap 0.05 eV above the quasi-Fermi level.