THE EFFECT OF ULTRAVIOLET-RADIATION ON A ZNS-TB THIN-FILM ELECTROLUMINESCENT DEVICE

The effect of UV laser radiation on the emission of a ZnS:Tb thin film electroluminescent (EL) device has been investigated. It was found th at the EL emission can be enhanced near threshold and attenuated at hi gher voltages by irradiating the device with UV radiation from an argo n ion laser. It is shown that these effects are related to the photoge nerated carriers that alter transport and build up of charge and the e lectric field. Both the charge and the field have been determined in r eal time to examine the enhancement and attenuation of the EL emission .