C. Christofides et al., OPTICAL SPECTROSCOPY ON IMPLANTED AND ANNEALED SILICON-WAFERS - PLASMA RESONANCE WAVELENGTH, Journal of applied physics, 75(7), 1994, pp. 3377-3384
A study of the effects of annealing temperature on phosphorus-implante
d silicon films is carried out. Fourier transform infrared spectroscop
y has been performed with two different instruments in the spectral ra
nges of 0.75-4 mum and 3-25 mum. In the first the first spectrum range
special attention was given to the influence of implantation dose on
reflectivity. The minimum reflectivity associated with plasma resonanc
e has been fully employed for estimation of the electrical activation
of implanted impurities. Other conclusions concerning the activation o
f free carriers (implanted impurities) with implantation dose and anne
aling temperature have been reached.