OPTICAL SPECTROSCOPY ON IMPLANTED AND ANNEALED SILICON-WAFERS - PLASMA RESONANCE WAVELENGTH

A study of the effects of annealing temperature on phosphorus-implante d silicon films is carried out. Fourier transform infrared spectroscop y has been performed with two different instruments in the spectral ra nges of 0.75-4 mum and 3-25 mum. In the first the first spectrum range special attention was given to the influence of implantation dose on reflectivity. The minimum reflectivity associated with plasma resonanc e has been fully employed for estimation of the electrical activation of implanted impurities. Other conclusions concerning the activation o f free carriers (implanted impurities) with implantation dose and anne aling temperature have been reached.