SPECTROSCOPIC STUDY OF SIC-LIKE STRUCTURES FORMED ON POLYCRYSTALLINE SILICON SHEETS DURING GROWTH

Authors
PIVAC B FURIC K MILUN M VALLA T BORGHESI A SASSELLA A
Citation
B. Pivac et al., SPECTROSCOPIC STUDY OF SIC-LIKE STRUCTURES FORMED ON POLYCRYSTALLINE SILICON SHEETS DURING GROWTH, Journal of applied physics, 75(7), 1994, pp. 3586-3592
Citations number
46
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
7
Year of publication
1994
Pages
3586 - 3592
Database
ISI
SICI code
0021-8979(1994)75:7<3586:SSOSSF>2.0.ZU;2-8
Abstract
Edge-defined film-fed grown polycrystalline silicon sheets, grown with one face exposed to oxidizing CO gas added to the inert Ar atmosphere , were studied. Interaction of CO with molten silicon surface during g rowth produced SiC-like structures in a thin layer on the surface expo sed to CO. Infrared spectroscopy results suggest that this layer is co nstituted of good quality SiC; however, Raman and x-ray photoelectron spectroscopy showed that it consists of Si1-xCx in the form of small c rystallites mixed with C- and O-rich silicon.