The effect of grain boundaries on the electrical resistivity of bulk n
ickel with a nanocrystalline structure has been investigated. For this
study, nanocrystalline nickel was produced using a pulse plating tech
nique that yields equiaxed nanostructures with negligible porosity. Us
ing the four probe technique, resistivity measurements were performed
at various temperatures ranging from 77 K to room temperature. The val
ues of the resistivity were found to increase with decreasing grain si
ze. This is mainly due to the increased volume fraction of interfaces
at smaller grain sizes and the associated electron scattering events a
t the grain boundaries. The temperature coefficient of resistivity was
found to decrease with decreasing grain size.