RANDOM TELEGRAPH SIGNALS IN SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

Possible physical mechanisms for random telegraph signal (RTS) -like f luctuations in the front-channel drain current of a silicon-on-insulat or (SOI) metal-oxide-semiconductor (MOS) transistor are discussed. Par ticular emphasis on two RTS mechanisms which are believed to be typica l for a SOI MOS transistor. The first one is related to carrier trappi ng in the Si film, by a deep-level trap in the depletion region. As su ch, this type of RTS is more or less complementary to the standard beh avior, which is caused by carrier trapping through a near-interface ox ide trap. Second, it is demonstrated experimentally that by varying th e back-gate bias of a thin-film SOI MOS transistor ''new'' RTSs may be detected.